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GD5F1GQ4RE9FG Datasheet(PDF) 28 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD5F1GQ4RE9FG Datasheet(HTML) 28 Page - GigaDevice Semiconductor (Beijing) Inc. |
28 / 53 page SPI(x1/x2/x4) NAND Flash 1G 28 10.5 Internal Data Move The INTERNAL DATA MOVE command sequence programs or replaces data in a page with existing data. The INTERNAL DATA MOVE command sequence is as follows: • 13H (PAGE READ to cache) • Optional 84H/C4H/34H(PROGRAM LOAD RANDOM DATA) • 06H (WRITE ENABLE) • 10H (PROGRAM EXECUTE) • 0FH (GET FEATURE command to read the status) Prior to performing an internal data move operation, the target page content must be read out into the cache register by issuing a PAGE READ (13H) command. The PROGRAM LOAD RANDOM DATA (84H/C4H/72H) command can be issued, if user wants to update bytes of data in the page. New data is loaded in the 12-bit column address. If the random data is not sequential, another PROGRAM LOAD RANDOM DATA (84H/C4H/72H) command must be issued with the new column address. After the data is loaded, the WRITE ENABLE command must be issued, and then a PROGRAM EXECUTE (10H) command can be issued to start the programming operation. 10.6 Program Load Random Data (84H) This command consists of an 8-bit Op code, followed by 4 dummy bits, and a 12-bit column address. New data is loaded in the column address provided with the 12 bits. If the random data is not sequential, then another PROGRAM LOAD RANDOM DATA (84H) command must be issued with a new column address, see Figure10-4 for details. This command is only available during internal data move sequence. Figure10-4. Program Load Random Data Sequence Diagram Command 0 1 2 3 4 5 6 7 84H CS# SCLK SI 8 9 10 11 12 13 14 22 23 3 2 1 0 0 0 MSB 26 27 28 29 25 6 5 4 3 2 1 0 30 31 24 34 35 36 37 33 38 39 32 7 6 5 4 3 2 1 0 7 CS# SCLK SI Data Byte1 0 0 11 10 Data Byte2 6 5 4 3 2 1 0 7 Data Byte 2176/2112 17424 17431 Dummy<3:0>, A11-A0 Note: when internal ECC disabled the Data Byte is 2176, when internal ECC enabled the Data Byte is 2112. |
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