GD9FU1G8F2AMG datasheet(46/55 Pages) GIGADEVICE

No. de pieza	GD9FU1G8F2AMG

Descripción Electrónicos	Single level cell technology

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Fabricante Electrónico	GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]

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GD9Fx1GxF2A

46

12.4 Performance Characteristics

Parameter

Symbol

Min

Typ.

Max

Unit

Data transfer from cell to register

tR

25

us

Program Time

tPROG

-

300

700

μs

Read Cache busy time

tCBSYR

5

tR

μs

Cache Program short busy time

tCBSYW

5

700

μs

Number of Partial Program Cycles in the Same Page

NOP

-

4

cycles

Block Erase Time

tBERS

-

3

10

ms

Device resetting time

Read

tRST

10

us

Program

20

us

Erase

500

us

Note: Typical value is measured at Vcc=3.3V, TA=25

℃(3.3V Device) or Vcc=1.8 V, TA=25℃(1.8V Device).

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GD9FU1G8F2AMG Datasheet(PDF) 46 Page - GigaDevice Semiconductor (Beijing) Inc.

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