GD9FU1G6F2AMG datasheet(52/55 Pages) GIGADEVICE

No. de pieza	GD9FU1G6F2AMG

Descripción Electrónicos	Single level cell technology

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Fabricante Electrónico	GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]

Página de inicio	http://www.gigadevice.com/

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GD9Fx1GxF2A

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14. Part Numbering Information

GD 9F U 1G 8 F 2 A M G I

1

2

3

4

5 6

7

8

9

10 11

1.

GD

2.

Memory Type

9F: Parallel NAND

3.

Power Supply

VCCQ

VCC

U

2.7v ~ 3.6v

S

1.7v ~ 1.95v

4.

Density:

12: 128Mb

25: 256Mb

51: 512Mb

1G: 1Gb

2G: 2Gb

4G: 4Gb

8G: 8Gb

AG: 16Gb

BG: 32Gb

CG: 64Gb

DG: 128Gb

EG: 256Gb

FG: 512Gb

HG: 1Tb

5.

Organization

8:

x8

6:

x16

6.

NAND Type:

F:

SLC, 1Die, 1nCE, 1Rnb

T:

TLC; 1Die, 1nCE, 1Rnb

U:

TLC; 2Die, 1nCE, 1Rnb

V:

TLC; 4Die, 1nCE, 1Rnb

7.

Function Mode:

2:

Sequential Row Read Disable;

8.

Process Generation:

A:

1st

B:

2nd

9.

Package

M: TSOPI-48

L:

FBGA-63

D:

FBGA-48

W: Wafer

10. Package Material & Packing

G:

Lead & Halogen Free

W: Wafer

11. Temperature Grade

I:

Industrial (-40C ~ 85C)

F:

Industrial+ (-40C ~ 85C)

J:

Industrial (-40C ~ 105C)

Note: (1) F: Industrial+, Full Function Test for Automotive

application and No AECQ

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GD9FU1G6F2AMG Datasheet(PDF) 52 Page - GigaDevice Semiconductor (Beijing) Inc.

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