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GD25D10CTIG Datasheet(PDF) 11 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25D10CTIG Datasheet(HTML) 11 Page - GigaDevice Semiconductor (Beijing) Inc. |
11 / 42 page 3.3V Uniform Sector Standard and Dual Serial Flash GD25D10C/05C 11 7. COMMANDS DESCRIPTION All commands, addresses and data are shifted in and out of the device by the host system, with the most significant bit first. On the first rising edge of SCLK after CS# is driven low, the one-byte command code must be shifted into the device, with the most significant bit first on SI, and each bit being latched on the rising edges of SCLK. See Table2, every command sequence starts with a one-byte command code. Depending on the command, this might be followed by address bytes, or data bytes, or dummy bytes. CS# must be driven high after the last bit of the command sequence has been completed. For the command of Read, Fast Read, Read Status Register or Release from Deep Power-Down, and Read Device ID, the shifted-in command sequence is followed by a data-out sequence. All read instruction can be completed after any bit of the data-out sequence is being shifted out, and then CS# must be driven high to return to deselected status. For the command of Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register, Write Enable, Write Disable or Deep Power-Down command, CS# must be driven high exactly at a byte boundary, which means the clock pulse number should be an exact multiple of eight. Otherwise the command is rejected to executed. Especially for Page Program command, if at any time the input end is not a completed byte, nothing will be written into the memory array, neither would WEL bit be reset. Table2. Commands Command Name Byte 1 Byte 2 Byte 3 Byte 4 Byte 5 Byte 6 n-Bytes Write Enable 06H Write Disable 04H Read Status Register 05H (S7-S0) (continuous) Write Status Register 01H S7-S0 Read Data 03H A23-A16 A15-A8 A7-A0 (D7-D0) (Next byte) (continuous) Fast Read 0BH A23-A16 A15-A8 A7-A0 dummy (D7-D0) (continuous) Dual Output Fast Read 3BH A23-A16 A15-A8 A7-A0 dummy (D7-D0)(1) (continuous) Page Program 02H A23-A16 A15-A8 A7-A0 D7-D0 Next byte Sector Erase 20H A23-A16 A15-A8 A7-A0 Block Erase(32K) 52H A23-A16 A15-A8 A7-A0 Block Erase(64K) D8H A23-A16 A15-A8 A7-A0 Chip Erase C7/60 H Deep Power-Down B9H Release From Deep Power-Down, And Read Device ID ABH dummy dummy dummy (DID7- DID0) (continuous) Release From Deep Power-Down ABH Manufacturer/ Device ID 90H 00H 00H 00H (MID7- MID0) (DID7- DID0) (continuous) Read Identification 9FH (MID7- MID0) (JDID15- JDID8) (JDID7- JDID0) (continuous) Read Unique ID 4BH 00H 00H 00H dummy (UID7- UID0) (continuous) NOTE: 1. Dual Output data IO0 = (D6, D4, D2, D0) O1 = (D7, D5, D3, D1) |
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