GD25B256DBIG datasheet(4/82 Pages) GIGADEVICE

No. de pieza	GD25B256DBIG

Descripción Electrónicos	3.3V Uniform Sector Dual and Quad Serial Flash

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Fabricante Electrónico	GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]

Página de inicio	http://www.gigadevice.com/

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4 / 82 page

3.3V Uniform Sector

Dual and Quad Serial Flash

GD25B256D

4

1. FEATURES

◆ 256M-bit Serial Flash

◆ Fast Program/Erase Speed

-256 Bytes per programmable page

-Page Program time: 0.4ms typical

-Sector Erase time: 70ms typical

◆ Standard, Dual, Quad SPI

-Block Erase time: 0.16/0.22s typical

-Standard SPI: SCLK, CS#, SI, SO

-Chip Erase time: 70s typical

-Dual SPI: SCLK, CS#, IO0, IO1

-Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3

◆ Flexible Architecture

-3 or 4-Byte Addressing Mode

-Uniform Sectors of 4K-Byte

-Uniform Blocks of 32/64K-Byte

◆ High Speed Clock Frequency

-Maximum 104MHz for fast read on 3.0 - 3.6V power supply

◆ Low Power Consumption

◆

Dual I/O Data transfer up to 208Mbits/s

-1uA typical deep power down current

◆

Quad I/O Data transfer up to 416Mbits/s

-12uA typical standby current

-Maximum 80MHz for fast read on 2.7 - 3.6V power supply

◆

Dual I/O Data transfer up to 160Mbits/s

◆ Advanced Security Features

◆

Quad I/O Data transfer up to 320Mbits/s

-3*2048-Byte Security Registers With OTP Locks

-128-bit Unique ID

◆ Software Write Protection

-Serial Flash Discoverable parameters (SFDP) register

-Write protect all/portion of memory via software

-Top/Bottom Block protection

◆ Single Power Supply Voltage

-Full voltage range: 2.7 - 3.6V

◆ Allows XIP(execute in place)operation

-Continuous Read With 8/16/32/64-Byte Wrap

◆ Package Information

-SOP16 (300mil)

◆ Cycling Endurance and Data Retention

-WSON8 (8*6mm)

-Minimum 100,000 Program/Erase Cycles

-TFBGA-24 (5*5 ball array)

-20-year data retention typical

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GD25B256DBIG Datasheet(PDF) 4 Page - GigaDevice Semiconductor (Beijing) Inc.

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