BC846BPDW1T1 datasheet(4/10 Pages) ONSEMI

No. de pieza	BC846BPDW1T1

Descripción Electrónicos	Dual General Purpose Transistors(NPN/PNP Duals)

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Fabricante Electrónico	ONSEMI [ON Semiconductor]

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BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series

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TYPICAL NPN CHARACTERISTICS − BC846

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (mA)

Figure 2. “On” Voltage

IC, COLLECTOR CURRENT (mA)

0.8

1.0

0.6

0.2

0.4

1.0

2.0

0.1

1.0

10

100

0.2

0.5

0.2

1.0

10

200

TA = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 5.0 V

VCE = 5 V

TA = 25°C

0

0.5

2.0

5.0

20

50

100

Figure 3. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 4. Base−Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

−1.0

1.2

1.6

2.0

0.02

1.0

10

0

20

0.1

0.4

0.8

0.2

2.0

10

200

1.0

TA = 25°C

200 mA

50 mA

IC =

10 mA

0.05

0.2

0.5

2.0

5.0

100 mA

20 mA

−1.4

−1.8

−2.2

−2.6

−3.0

0.5

5.0

20

50

100

−55°C to 125°C

qVB for VBE

Figure 5. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

40

Figure 6. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mA)

0.1

0.2

1.0

50

2.0

10

100

200

500

50

20

10

6.0

4.0

1.0

10

50 100

5.0

VCE = 5 V

TA = 25°C

0.5

5.0

20

TA = 25°C

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Número de pieza similar - BC846BPDW1T1

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