Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Samsung semiconductor |
KMM5361203C2W
|
280Kb / 17P |
1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh
|
KMM5362205C2W
|
296Kb / 17P |
2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
|
KMM5322204C2W
|
287Kb / 17P |
2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V
|
KMM5322200C2W
|
280Kb / 17P |
2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V
|
KMM5361205C2W
|
289Kb / 17P |
1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
|
KMM5368003BSW
|
365Kb / 18P |
8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
KMM5364005BSW
|
393Kb / 19P |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
KMM5364003BSW
|
351Kb / 18P |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
KMM5364003CSW
|
391Kb / 20P |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
KMM5364005CSW
|
415Kb / 21P |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|