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CDCDB2000 Datasheet(Hoja de datos) 7 Page - Texas Instruments

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No. de Pieza. CDCDB2000
Descripción  CDCDB2000 DB2000QL-Compliant 20-Output Clock Buffer for PCIe Gen 1 to Gen 5
Descarga  33 Pages
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Fabricante  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
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7
CDCDB2000
www.ti.com
SNAS787 – NOVEMBER 2019
Product Folder Links: CDCDB2000
Submit Documentation Feedback
Copyright © 2019, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
VDD, VDD_A
Power supply voltage
–0.3
3.6
V
VIN
IO input voltage
GND
VDD + 0.3
V
TJ
Junction temperature
125
°C
Tstg
Storage temperature
–65
150
°C
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC
JS-001, all pins(1)
±3000
V
Charged device model (CDM), per JEDEC
specification JESD22-C101, all pins(2)
±1000
6.3 Recommended Operating Conditions
Over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VDD
IO supply voltage
3.135
3.3
3.465
V
VDD_A
Core supply voltage
3.135
3.3
3.465
V
TA
Ambient temperature
–40
85
°C
TJ
Junction temperature
125
°C
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.4 Thermal Information
THERMAL METRIC(1)
CDCDB2000
UNIT
NPP (GQFN)
80 PINS
RθJA
Junction-to-ambient thermal resistance
32.7
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
31.2
°C/W
RθJB
Junction-to-board thermal resistance
15.9
°C/W
ΨJT
Junction-to-top characterization parameter
0.4
°C/W
ΨJB
Junction-to-board characterization parameter
15.8
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
1.5
°C/W
6.5 Electrical Characteristics
VDD, VDD_A = 3.3 V ± 5 %, -40 °C < TA < 85 °C. Typical values are at VDD = VDD_A = 3.3 V, 25 °C (unless otherwise
noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
CURRENT CONSUMPTION
IDD_A
Core supply current
Active mode. CKPWRGD_PD# = 1
12
mA
Power down mode. CKPWRGD_PD# = 0
8




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