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DLPC900 Datasheet(PDF) 23 Page - Texas Instruments |
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DLPC900 Datasheet(HTML) 23 Page - Texas Instruments |
23 / 83 page 23 DLPC900 www.ti.com DLPS037D – OCTOBER 2014 – REVISED MARCH 2019 Product Folder Links: DLPC900 Submit Documentation Feedback Copyright © 2014–2019, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) All voltage values are with respect to GND. (3) All of the 3.3-, 1.8-, and 1.15-V power should be applied and removed per the procedure defined in System Power-Up Sequence. Overlap currents, if allowed to continue flowing unchecked not only increase total power dissipation in a circuit, but degrade the circuit reliability, thus shortening its usual operating life. (4) Applies to external input and bidirectional buffers. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature (unless otherwise noted) (see (1) ) MIN MAX UNIT Supply voltage (2) (3) VDDC (core) –0.3 1.6 V VDD18 (LVDSAVD I/O and internal DRAMVDD) –0.3 2.5 VDD33 (I/O) –0.3 3.9 PLLD_VDD (1.15 V DMD clock generator – digital) –0.3 1.6 PLLM1_VDD (1.15 V master-LS clock generator – digital) –0.3 1.6 PLLM2_VDD (1.15 V master-HS clock generator – digital) –0.3 1.6 PLLD_VAD (1.8 V DMD clock generator – analog) –0.3 2.5 PLLM1_VAD (1.8 V master-LS clock generator – analog) –0.3 2.5 PLLM2_VAD (1.8 V master-HS clock generator – analog) –0.3 2.5 PLLS_VAD (1.15 V video-2X – analog) –0.5 1.4 VI Input voltage (4) USB –1 5.25 V OSC –0.3 VDD33 + 0.3 V 3.3 LVTTL –0.3 3.6 3.3 I2C –0.5 3.8 VO Output voltage USB –1 5.25 V 1.8 LVDS –0.3 2.2 3.3 LVTTL –0.3 3.6 3.3 I2C –0.5 3.8 TJ Operating junction temperature 0 111 °C Tstg Storage temperature –40 125 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1) ±2000 V Charged device model (CDM), per JEDEC specification JESD22-C101, all pins (2) ±300 |
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