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MC10EP56DT Datasheet(PDF) 3 Page - ON Semiconductor

No. de pieza MC10EP56DT
Descripción Electrónicos  Dual Differential 2:1 Multiplexer
Download  8 Pages
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC10EP56DT Datasheet(HTML) 3 Page - ON Semiconductor

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MC10EP56, MC100EP56
http://onsemi.com
3
MAXIMUM RATINGS (Note 2)
Symbol
Parameter
Condition 1
Condition 2
Rating
Units
VCC
PECL Mode Power Supply
VEE = 0 V
6
V
VEE
NECL Mode Power Supply
VCC = 0 V
−6
V
VI
PECL Mode Input Voltage
VEE = 0 V
VI  VCC
6
V
VI
PECL Mode In ut Voltage
NECL Mode Input Voltage
VEE
0 V
VCC = 0 V
VI  VCC
VI  VEE
6
−6
V
V
Iout
Output Current
Continuous
Surge
50
100
mA
mA
IBB
VBB Sink/Source
± 0.5
mA
TA
Operating Temperature Range
−40 to +85
°C
Tstg
Storage Temperature Range
−65 to +150
°C
qJA
Thermal Resistance (Junction−to−Ambient)
0 LFPM
500 LFPM
20 TSSOP
20 TSSOP
140
100
°C/W
°C/W
qJC
Thermal Resistance (Junction−to−Case)
std bd
20 TSSOP
23 to 41
°C/W
qJA
Thermal Resistance (Junction−to−Ambient)
0 LFPM
500 LFPM
20 SOIC
20 SOIC
90
60
°C/W
°C/W
qJC
Thermal Resistance (Junction−to−Case)
std bd
20 SOIC
33 to 35
°C/W
Tsol
Wave Solder
<2 to 3 sec @ 248
°C
265
°C
2. Maximum Ratings are those values beyond which device damage may occur.
10EP DC CHARACTERISTICS, PECL VCC = 3.3 V, VEE = 0 V (Note 3)
−40
°C
25
°C
85
°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
50
61
75
50
63
75
55
65
78
mA
VOH
Output HIGH Voltage (Note 4)
2165
2290
2415
2230
2355
2480
2290
2415
2540
mV
VOL
Output LOW Voltage (Note 4)
1365
1490
1615
1430
1555
1680
1490
1615
1740
mV
VIH
Input HIGH Voltage (Single−Ended)
2090
2415
2155
2480
2215
2540
mV
VIL
Input LOW Voltage (Single−Ended)
1365
1690
1460
1755
1490
1815
mV
VBB
Output Voltage Reference
1790
1890
1990
1855
1955
2055
1915
2015
2115
mV
VIHCMR
Input HIGH Voltage Common Mode
Range (Differential) (Note 5)
2.0
3.3
2.0
3.3
2.0
3.3
V
IIH
Input HIGH Current
150
150
150
mA
IIL
Input LOW Current
0.5
0.5
0.5
mA
NOTE: EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained.
3. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to −2.2 V.
4. All loading with 50
W to VCC−2.0 volts.
5. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential
input signal.


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