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IKW50N60T Datasheet(PDF) 3 Page - Infineon Technologies AG

No. de pieza IKW50N60T
Descripción Electrónicos  Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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Fabricante Electrónico  INFINEON [Infineon Technologies AG]
Página de inicio  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IKW50N60T Datasheet(HTML) 3 Page - Infineon Technologies AG

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IKW50N60T
TrenchStop Series
q
Power Semiconductors
3
Rev. 2.1 Dec-04
Switching Characteristic, Inductive Load, at Tj=25
°C
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
td(on)
-
26
-
Rise time
tr
-
29
-
Turn-off delay time
td(off)
-
299
-
Fall time
tf
-
29
-
ns
Turn-on energy
Eon
-
1.2
-
Turn-off energy
Eoff
-
1.4
-
Total switching energy
Ets
Tj=25
°C,
VCC=400V,IC=50A,
VGE=0/15V,
RG= 7
Ω,
Lσ
1) =103nH,
Cσ
1) =39pF
Energy losses include
“tail” and diode
reverse recovery.
-
2.6
-
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
-
143
-
ns
Diode reverse recovery charge
Qrr
-
1.8
-
µC
Diode peak reverse recovery current
Irrm
-
27.7
-
A
Diode peak rate of fall of reverse
recovery current during tb
dirr/dt
Tj=25
°C,
VR=400V, IF=50A,
diF/dt=1280A/
µs
-
671
-
A/
µs
Switching Characteristic, Inductive Load, at Tj=175
°C
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
td(on)
-
27
-
Rise time
tr
-
33
-
Turn-off delay time
td(off)
-
341
-
Fall time
tf
-
55
-
ns
Turn-on energy
Eon
-
1.8
-
Turn-off energy
Eoff
-
1.8
-
Total switching energy
Ets
Tj=175
°C,
VCC=400V,IC=50A,
VGE=0/15V,
RG= 7
Ω
Lσ
1) =103nH,
Cσ
1) =39pF
Energy losses include
“tail” and diode
reverse recovery.
-
3.6
-
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
-
205
-
ns
Diode reverse recovery charge
Qrr
-
4.3
-
µC
Diode peak reverse recovery current
Irrm
-
40.7
-
A
Diode peak rate of fall of reverse
recovery current during tb
dirr/dt
Tj=175
°C
VR=400V, IF=50A,
diF/dt=1280A/
µs
-
449
-
A/
µs
1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.


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