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IKW50N60T Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IKW50N60T Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 13 page IKW50N60T TrenchStop Series q Power Semiconductors 3 Rev. 2.1 Dec-04 Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. Typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 26 - Rise time tr - 29 - Turn-off delay time td(off) - 299 - Fall time tf - 29 - ns Turn-on energy Eon - 1.2 - Turn-off energy Eoff - 1.4 - Total switching energy Ets Tj=25 °C, VCC=400V,IC=50A, VGE=0/15V, RG= 7 Ω, Lσ 1) =103nH, Cσ 1) =39pF Energy losses include “tail” and diode reverse recovery. - 2.6 - mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr - 143 - ns Diode reverse recovery charge Qrr - 1.8 - µC Diode peak reverse recovery current Irrm - 27.7 - A Diode peak rate of fall of reverse recovery current during tb dirr/dt Tj=25 °C, VR=400V, IF=50A, diF/dt=1280A/ µs - 671 - A/ µs Switching Characteristic, Inductive Load, at Tj=175 °C Value Parameter Symbol Conditions min. Typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 27 - Rise time tr - 33 - Turn-off delay time td(off) - 341 - Fall time tf - 55 - ns Turn-on energy Eon - 1.8 - Turn-off energy Eoff - 1.8 - Total switching energy Ets Tj=175 °C, VCC=400V,IC=50A, VGE=0/15V, RG= 7 Ω Lσ 1) =103nH, Cσ 1) =39pF Energy losses include “tail” and diode reverse recovery. - 3.6 - mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr - 205 - ns Diode reverse recovery charge Qrr - 4.3 - µC Diode peak reverse recovery current Irrm - 40.7 - A Diode peak rate of fall of reverse recovery current during tb dirr/dt Tj=175 °C VR=400V, IF=50A, diF/dt=1280A/ µs - 449 - A/ µs 1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E. |
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