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FDD26AN06A0 Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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FDD26AN06A0 Datasheet(HTML) 5 Page - Fairchild Semiconductor |
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5 / 11 page  ©2004 Fairchild Semiconductor Corporation FDD26AN06A0 Rev. A Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature Figure 13. Capacitance vs Drain to Source Voltage Figure 14. Gate Charge Waveforms for Constant Gate Current Typical Characteristics T C = 25°C unless otherwise noted 0.4 0.6 0.8 1.0 1.2 -80 -40 0 40 80 12 160 200 VGS = VDS, ID = 250µA TJ, JUNCTION TEMPERATURE ( oC) 0.90 0.95 1.00 1.05 1.10 1.15 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE ( oC) ID = 250µA 100 1000 0.1 1 10 60 2000 30 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 0V, f = 1MHz CISS = CGS + CGD COSS ≅ CDS + CGD CRSS = CGD 0 2 4 6 8 10 0 2 4 6 8 10 12 14 Qg, GATE CHARGE (nC) VDD = 30V ID = 36A ID = 7A WAVEFORMS IN DESCENDING ORDER: |
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