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FDS6984AS_NL Datasheet(PDF) 8 Page - Fairchild Semiconductor

No. de pieza FDS6984AS_NL
Descripción Electrónicos  Dual Notebook Power Supply N-Channel PowerTrench SyncFET
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Fabricante Electrónico  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS6984AS_NL Datasheet(HTML) 8 Page - Fairchild Semiconductor

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FDS6984AS Rev A (X)
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET.
This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 22
shows the reverse recovery characteristic of the
FDS6984AS.
Figure 22. FDS6984AS SyncFET body
diode reverse recovery characteristic.
For comparison purposes, Figure 23 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6984A).
Figure 23. Non-SyncFET (FDS6984A) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage.
This will
increase the power in the device.
0.000001
0.00001
0.0001
0.001
0.01
0
10
20
30
VDS, REVERSE VOLTAGE (V)
125
oC
25
oC
100
oC
Figure 24. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
10nS/DIV
10nS/DIV
0V


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