FQPF9N90C datasheet(3/10 Pages) FAIRCHILD

No. de pieza	FQPF9N90C

Descripción Electrónicos	900V N-Channel MOSFET

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Fabricante Electrónico	FAIRCHILD [Fairchild Semiconductor]

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3 / 10 page

Rev. A, September 2003

Typical Characteristics

10

-1

10

0

10

1

10

-1

10

0

10

1

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom: 5.5 V

※ Notes :

1. 250μ s Pulse Test

2. T

C = 25

℃

V

DS, Drain-Source Voltage [V]

2468

10

-1

10

0

10

1

150

oC

25

oC

-55

oC

※ Notes :

1. V

DS

= 50V

2. 250μ s Pulse Test

V

GS, Gate-Source Voltage [V]

0

5

10

15

20

25

30

1.0

1.5

2.0

2.5

3.0

V

GS

= 20V

V

GS = 10V

※ Note : T

J = 25

℃

I

D, Drain Current [A]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

10

-1

10

0

10

1

150℃

※ Notes :

1. V

GS

= 0V

2. 250μ s Pulse Test

25℃

V

SD, Source-Drain voltage [V]

10

-1

10

0

10

1

0

500

1000

1500

2000

2500

3000

3500

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

※ Notes :

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

0

102030

40

50

0

2

4

6

8

10

12

V

DS

= 450V

V

DS = 180V

V

DS = 720V

※ Note : I

D = 9A

Q

G, Total Gate Charge [nC]

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

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