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FM3100-AN Datasheet(PDF) 1 Page - Formosa MS |
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FM3100-AN Datasheet(HTML) 1 Page - Formosa MS |
1 / 2 page Chip Schottky Barrier Diodes Silicon epitaxial planer type Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. Mechanical data Case : Molded plastic, JEDECDO-214AC Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting Position : Any Weight : 0.0015 ounce, 0.05 gram FM320-AN THRU FM3100-AN Formosa MS (V) (V) (V) (V) ( oC) FM320-AN SS32 20 14 20 FM330-AN SS33 30 21 30 FM340-AN SS34 40 28 40 FM350-AN SS35 50 35 50 FM360-AN SS36 60 42 60 FM380-AN SS38 80 56 80 FM3100-AN S310 100 70 100 0.50 0.75 0.85 -55 to +125 -55 to +150 SYMBOLS MARKING CODE Operating temperature VRRM *1 VRMS *2 VR *3 VF *4 MAXIMUM RATINGS (AT TA=25 oC unless otherwise noted) PARAMETER CONDITIONS Symbol MIN. TYP. MAX. UNIT Forward rectified current See Fig.1 IO 3.0 A Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) IFSM 80 A VR = VRRM TA = 25 oC 0.5 mA VR = VRRM TA = 125 oC 20 mA Thermal resistance Junction to ambient RqJA 80 oC / w Diode junction capacitance f=1MHz and applied 4vDC reverse voltage CJ 250 pF Storage temperature TSTG -55 +150 oC Reverse current IR *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage 0.185(4.8) 0.173(4.4) 0.012(0.3) Typ. 0.110(2.8) 0.094(2.4) 0.165(4.2) 0.150(3.8) 0.067(1.7) 0.053(1.3) 0.060(1.5) 0.040 (1.0) Typ. 0.040(1.0) Typ. Dimensions in inches and (millimeters) SMA-N 0.067(1.7) |
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Descripción similar - FM3100-AN |
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