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FM3100-AN Datasheet(PDF) 1 Page - Formosa MS

No. de pieza FM3100-AN
Descripción Electrónicos  Chip Schottky Barrier Diodes - Silicon epitaxial planer type
Download  2 Pages
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Fabricante Electrónico  FORMOSA [Formosa MS]
Página de inicio  http://www.formosams.com
Logo FORMOSA - Formosa MS

FM3100-AN Datasheet(HTML) 1 Page - Formosa MS

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Chip Schottky Barrier Diodes
Silicon epitaxial planer type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDECDO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gram
FM320-AN THRU FM3100-AN
Formosa MS
(V)
(V)
(V)
(V)
(
oC)
FM320-AN
SS32
20
14
20
FM330-AN
SS33
30
21
30
FM340-AN
SS34
40
28
40
FM350-AN
SS35
50
35
50
FM360-AN
SS36
60
42
60
FM380-AN
SS38
80
56
80
FM3100-AN
S310
100
70
100
0.50
0.75
0.85
-55 to +125
-55 to +150
SYMBOLS
MARKING
CODE
Operating
temperature
VRRM
*1
VRMS
*2
VR
*3
VF
*4
MAXIMUM RATINGS (AT TA=25
oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.1
IO
3.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
IFSM
80
A
VR = VRRM TA =
25
oC
0.5
mA
VR = VRRM TA = 125
oC
20
mA
Thermal resistance
Junction to ambient
RqJA
80
oC / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
CJ
250
pF
Storage temperature
TSTG
-55
+150
oC
Reverse current
IR
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
0.185(4.8)
0.173(4.4)
0.012(0.3) Typ.
0.110(2.8)
0.094(2.4)
0.165(4.2)
0.150(3.8)
0.067(1.7)
0.053(1.3)
0.060(1.5)
0.040 (1.0) Typ.
0.040(1.0) Typ.
Dimensions in inches and (millimeters)
SMA-N
0.067(1.7)


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