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MMBT5550 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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MMBT5550 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com MMBT5550 Rev. A August 2005 MMBT5550 NPN General Purpose Amplifier • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings * T a = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T a = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 140 V VCBO Collector-Base Voltage 160 V VEBO Emitter-Base Voltage 6.0 V IC Collector current - Continuous 600 mA TJ, Tstg Junction and Storage Temperature -55 ~ +150 °C Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 1.0mA, IB = 0 140 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100µA, IE = 0 160 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10mA, IC = 0 6.0 V ICBO Collector Cutoff Current VCB = 100V, IE = 0 VCB = 100V, IE = 0, Ta = 100°C 100 100 nA µA IEBO Emitter Cutoff Current VEB = 4.0V, IC = 0 50 nA On Characteristics hFE DC Current Gain IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V 60 60 20 250 VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA 0.15 0.25 V V VBE(sat) Base-Emitter On Voltage IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA 1.0 1.2 V V SOT-23 1. Base 2. Emitter 3. Collector 1 2 3 Marking: 1F |
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