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MUN5211T1

 NPN SILICON BIAS RESISTOR TRANSISTORS ( 10 Page)


ONSEMI
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MUN5211T1 Series
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6
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5212T1
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
1000
10
IC, COLLECTOR CURRENT (mA)
TA =75°C
25°C
−25°C
100
10
1
100
75°C
25°C
100
0
Vin, INPUT VOLTAGE (VOLTS)
10
1
0.1
0.01
0.001
24
68
10
TA =−25°C
0
IC, COLLECTOR CURRENT (mA)
100
TA =−25°C
75°C
10
1
0.1
10
20
30
40
50
25°C
Figure 11. Input Voltage versus Output Current
0.001
TA =−25°C
75°C
25°C
0.01
0.1
1
40
IC, COLLECTOR CURRENT (mA)
0
20
50
50
0
10
203040
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
IC/IB = 10
VCE = 10 V
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
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