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MUN5211T1

 NPN SILICON BIAS RESISTOR TRANSISTORS ( 10 Page)


ONSEMI
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MUN5211T1 Series
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TYPICAL ELECTRICAL CHARACTERISTICS − MUN5211T1
Figure 2. VCE(sat) versus IC
10
020
30
IC, COLLECTOR CURRENT (mA)
10
1
0.1
TA =−25°C
75°C
25°C
40
50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
1
0.1
0.01
0.001
020
40
50
IC, COLLECTOR CURRENT (mA)
1000
100
10
1
10
100
IC, COLLECTOR CURRENT (mA)
TA =75°C
25°C
−25°C
TA =−25°C
25°C
Figure 5. Output Current versus Input Voltage
75°C
25°C
TA =−25°C
100
10
1
0.1
0.01
0.001
01
2
3
4
Vin, INPUT VOLTAGE (VOLTS)
56
78
9
10
Figure 6. Input Voltage versus Output Current
50
010
20
30
40
4
3
1
2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
VCE = 10 V
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10
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