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SI7483DP Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI7483DP Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 6 page Si7483DP Vishay Siliconix New Product www.vishay.com 2 Document Number: 71940 S-21441—Rev. A, 19-Aug-02 SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS =VGS,ID = --250 mA --1.0 --3.0 V Gate-Body Leakage IGSS VDS =0 V, VGS = 20 V 100 nA Zero Gate Voltage Drain Current IDSS VDS =--24 V, VGS =0 V --1 mA Zero Gate Voltage Drain Current IDSS VDS =--24 V, VGS =0 V, TJ =70_C --10 mA On-State Drain Currenta ID(on) VDS =--5 V, VGS =--10 V --30 A Drain Source On State Resistancea rDS( ) VGS =--10 V, ID =--24 A 0.0041 0.005 Ω Drain-Source On-State Resistancea rDS(on) VGS =--4.5 V, ID =--17 A 0.0077 0.0095 Ω Forward Transconductancea gfs VDS =--15 V, ID =--24 A 70 S Diode Forward Voltagea VSD IS =--2.9 A, VGS =0 V --0.75 --1.1 V Dynamicb Total Gate Charge Qg 120 180 Gate-Source Charge Qgs VDS =--15 V, VGS =--10 V, ID =--24 A 18.3 nC Gate-Drain Charge Qgd 33.2 Turn-On Delay Time td(on) 25 40 Rise Time tr VDD =--15 V,RL =15 Ω 40 65 ns Turn-Off Delay Time td(off) VDD = --15 V, RL = 15 Ω ID ≅ --1 A, VGEN =--10 V, RG =6 Ω 220 350 ns Fall Time tf 125 200 Gate Resistance Rg 4 Ω Source-Drain Reverse Recovery Time trr IF = --2.9 A, di/dt = 100 A/ms 87 135 ns Notes a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 10 20 30 40 50 60 0 1234 5 VGS = 10thru4V 25_C TC = 125_C --55_C Output Characteristics Transfer Characteristics VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) 3V |
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