STGP14NC60KD - STGF14NC60KD - STGB14NC60KD

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Table 3: Absolute Maximum ratings

( ) Pulse width limited by Max Junction Temperature.

Table 4: Thermal Data

Table 5: Main Parameters

(#) Calculated according to the iterative formula:

Symbol

Parameter

Value

Unit

STGB14NC60KD

STGP14NC60KD

STGF14NC60KD

600

V

Emitter-Collector Voltage

20

V

Gate-Emitter Voltage

±20

V

25

11

A

14

7

A

Collector Current (pulsed)

50

A

20

A

80

25

W

Derating Factor

0.64

0.20

W/°C

Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C)

--

2500

V

Storage Temperature

– 55 to 150

°C

Operating Junction Temperature

Min.

Typ.

Max.

Rthj-case

Thermal Resistance Junction-case

TO-220

D²PAK

1.56

°C/W

TO-220FP

5.0

°C/W

Rthj-amb

Thermal Resistance Junction-ambient

62.5

°C/W

Maximum Lead Temperature for Soldering

Purpose (1.6 mm from case, for 10 sec.)

300

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Collector-Emitter

Breakdown Voltage

600

V

Collector cut-off Current

10

1

µA

mA

Gate-Emitter Leakage

±100

nA

Gate Threshold Voltage

5

7

V

Collector-Emitter Saturation

Voltage

2.0

1.8

2.5

V

V

I

C

T

C

()

T

JMAX

T

C

–

R

THJ

C

–

V

CESAT MAX

()

T

C

I

C

,

()

×

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=