2SD1267 datasheet(1/2 Pages) PANASONIC

No. de pieza	2SD1267

Descripción Electrónicos	Silicon PNP epitaxial planar type(For low-frequency power amplification)

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Fabricante Electrónico	PANASONIC [Panasonic Semiconductor]

Página de inicio	http://www.panasonic.com/industrial/

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Power Transistors

2SB942, 2SB942A

Silicon PNP epitaxial planar type

For low-frequency power amplification

Complementary to 2SD1267 and 2SD1267A

s Features

q

High forward current transfer ratio hFE which has satisfactory linearity

q

Low collector to emitter saturation voltage VCE(sat)

q

Full-pack package which can be installed to the heat sink with

one screw

s Absolute Maximum Ratings (T

C=25˚C)

Parameter

Collector to

base voltage

Collector to

emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

Tj

Tstg

Ratings

–60

–80

–60

–80

–5

–8

–4

40

2

150

–55 to +150

Unit

V

A

W

˚C

2SB942

2SB942A

2SB942

2SB942A

TC=25°C

Ta=25

°C

s Electrical Characteristics (T

C=25˚C)

Parameter

Collector cutoff

current

Collector cutoff

current

Emitter cutoff current

Collector to emitter

voltage

Forward current transfer ratio

Base to emitter voltage

Collector to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

Symbol

ICES

ICEO

IEBO

VCEO

hFE1

*

hFE2

VBE

VCE(sat)

fT

ton

tstg

tf

Conditions

VCE = –60V, VBE = 0

VCE = –80V, VBE = 0

VCE = –30V, IB = 0

VCE = –60V, IB = 0

VEB = –5V, IC = 0

IC = –30mA, IB = 0

VCE = –4V, IC = –1A

VCE = –4V, IC = –3A

IC = –4A, IB = – 0.4A

VCE = –10V, IC = – 0.1A, f = 10MHz

IC = –4A, IB1 = – 0.4A, IB2 = 0.4A

min

–60

–80

70

15

typ

30

0.2

0.5

0.2

max

–400

–700

–1

250

–2

–1.5

Unit

µA

mA

V

MHz

µs

2SB942

2SB942A

2SB942

2SB942A

2SB942

2SB942A

Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the

rank classification.

*h

FE1 Rank classification

Rank

Q

P

hFE1

70 to 150

120 to 250

Unit: mm

1:Base

2:Collector

3:Emitter

TO–220 Full Pack Package(a)

10.0

±0.2

5.5

±0.2

0.5

+0.2

–0.1

1.4

±0.1

1.3

±0.2

0.8

±0.1

2.54

±0.25

5.08

±0.5

2

13

2.7

±0.2

4.2

±0.2

φ3.1±0.1

Número de pieza similar - 2SD1267

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Panasonic Semiconductor	2SD1267	47Kb / 2P	Silicon NPN triple diffusion planar type
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2SD1267 Datasheet(PDF) 1 Page - Panasonic Semiconductor

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Número de pieza similar - 2SD1267

Descripción similar - 2SD1267

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