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2SA1127 Datasheet(PDF) 1 Page - Panasonic Semiconductor

No. de pieza 2SA1127
Descripción Electrónicos  Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)
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Fabricante Electrónico  PANASONIC [Panasonic Semiconductor]
Página de inicio  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SA1127 Datasheet(HTML) 1 Page - Panasonic Semiconductor

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1
Transistor
2SC2634
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SA1127
s Features
q
Low noise voltage NV.
q
High foward current transfer ratio hFE.
s Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0
±0.2
4.0
±0.2
0.45
+0.2
–0.1
0.45
+0.2
–0.1
1.27
1.27
2.54
±0.15
2
13
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
60
55
7
200
100
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise voltage
Symbol
ICBO
ICEO
VCBO
VCEO
VEBO
hFE
*
VCE(sat)
VBE
fT
NV
Conditions
VCB = 10V, IE = 0
VCE = 10V, IB = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 5V, IC = 2mA
ICE = 100mA, IB = 10mA
VCE = 1V, IC = 30mA
VCB = 5V, IE = –2mA, f = 200MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
min
60
55
7
180
typ
1
0.01
200
max
100
1
700
0.6
1
150
Unit
nA
µA
V
V
V
V
V
MHz
mV
*h
FE Rank classification
Rank
R
S
T
hFE
180 ~ 360
260 ~ 520
360 ~ 700


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