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2SD1776 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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2SD1776 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 3 page 1 Power Transistors 2SD1776, 2SD1776A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio s Features q High foward current transfer ratio hFE q Satisfactory linearity of foward current transfer ratio hFE q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (T C=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg Ratings 80 100 60 80 6 4 2 0.5 25 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C 2SD1776 2SD1776A 2SD1776 2SD1776A TC=25°C Ta=25 °C s Electrical Characteristics (T C=25˚C) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time Symbol ICBO ICEO IEBO VCEO hFE * VCE(sat) VBE(sat) fT Cob ton tstg tf Conditions VCB = 80V, IE = 0 VCB = 100V, IE = 0 VCE = 40V, IB = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 300mA IC = 1A, IB = 25mA IC = 1A, IB = 25mA VCE = 12V, IC = 200mA, f = 10MHz VCB = 10V, IE = 0, f = 1MHz IC = 1A, IB1 = 25mA, IB2 = –25mA, VCC = 50V min 60 80 500 typ 40 30 0.6 2.5 1 max 100 100 100 100 1500 1 1.2 Unit µA µA µA V V V MHz pF µs µs µs 2SD1776 2SD1776A 2SD1776 2SD1776A *h FE Rank classification Rank Q P hFE 500 to 1000 800 to 1500 Unit: mm 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 10.0 ±0.2 5.5 ±0.2 0.5 +0.2 –0.1 1.4 ±0.1 1.3 ±0.2 0.8 ±0.1 2.54 ±0.25 5.08 ±0.5 2 13 2.7 ±0.2 4.2 ±0.2 φ3.1±0.1 |
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