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FMM6G30US60 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FMM6G30US60 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page ©2003 Fairchild Semiconductor Corporation FMM6G30US60 Rev. A IGBT FMM6G30US60 Compact & Complex Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control and general inverters where short-circuit ruggedness is required. Features • Short Circuit rated Time ; 10us @ TC =100°C, VGE = 15V • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 30A • High Input Impedance • 3 Phase Rectifier Circuit • Fast & Soft Anti-Parallel FWD • Built-in NTC Thermistor • UL Certified No. E209204 Application • AC & DC Motor Controls • General Purpose Inverters • Robotics • Servo Controls •UPS Internal Circuit Diagram R S T P P+ GU EU GV EV -GV U GW EW V -GW W -GU E NTC T1 T2 NN- Package Code : 24PM-AA Absolute Maximum Ratings T C = 25°C unless otherwise noted Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Symbol Description FMM6G30US60 Units Inverter VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage ± 20 V IC Collector Current @ TC = 80°C30 A ICM (1) Pulsed Collector Current 60 A IF Diode Continuous Forward Current @ TC = 80°C30 A IFM Diode Maximum Forward Current 60 A PD Maximum Power Dissipation @ TC = 25°C 104 W TSC Short Circuit Withstand Time @ TC = 100°C10 us Converter VRRM Repetitive Peak Reverse Voltage 1600 V IO Average Output Rectified Current 30 A IFSM Surge Forward Current @ 1Cycle at 60Hz, Peak value Non-Repetitive 300 A I2t Energy pulse @ 1Cycle at 60Hz 369 A2s Common TJ Operating Junction Temperature -40 to +150 °C TSTG Storage Temperature Range -40 to +125 °C VISO Isolation Voltage @ AC 1minute 2500 V Mounting Torque Mounting part Screw @ M4 4.0 N.m |
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