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Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS CN452 / CN453 TO-92 Plastic Package General Purpose Transistors designed for Small and Medium Signal Amplification from D.C to Radio Frequencies Complementary CP552 and CP553 ABSOLUTE MAXIMUM RATINGS DESCRIPTION CN453 UNITS Collector Base Voltage 120 V Collector Emitter Voltage 100 V Emitter Base Voltage V Peak Pulse Current A Collector Current Continuous A Base Current mA Power Dissipation @ Ta=25ºC W Power Dissipation @ Ta=25ºC W Power Dissipation @ Tc=25ºC W Operating and Storage Junction Temperature Range ºC *Transistors mounted on printed circuit board. Lead Length 4mm, mounting pad for collector lead min 10mm x 10 mm, copper ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION CN453 UNITS Collector Cut Off Current ICBO VCB=80V, IE = 0 nA VCB=100V, IE = 0 <100 nA Emitter Cut Off Current IEBO VEB=4V, IC = 0 <100 nA Collector Emitter Saturation Voltage VCE (sat) IC=150mA, IB=15mA <0.7 V Base Emitter Saturation Voltage VBE (sat) IC=150mA, IB=15mA <1.3 V Collector Emitter Voltage VCEO IC=1mA, IB=0 >100 V DC Current Gain *hFE VCE=10V, IC=150mA 40 - 200 VCE=10V, IC=1A >10 DYNAMIC CHARACTERISTICS DESCRIPTION SYMBOL TEST CONDITION CN453 UNITS Transition Frequency fT VCE=10V, IC=50mA, f=100MHz >100 MHz Output Capacitance Cobo VCB=10V, IE=0, f=1MHz <15 pF *Pulse Condition: Pulse Width = 300 µµs, Duty Cycle < 2%. CN452_453Rev_2 211204E 0.8 2.0 - 65 to +150 <15 >10 CN452 >100 <0.7 <1.3 >80 40 - 150 CN452 <100 <100 SYMBOL VCBO VCEO VEBO ICM IC IB PD PD Tj, Tstg CN452 100 80 *PD 1.0 5.0 2.0 1.0 200 E B C Continental Device India Limited Data Sheet Page 1 of 4 |
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