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L8050LT1 Datasheet(Hoja de datos) 1 Page - Leshan Radio Company

No. de Pieza. L8050LT1
Descripción  General Purpose Transistors NPN Silicon
Descarga  3 Pages
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Fabricante  LRC [Leshan Radio Company]
Página de inicio  http://www.lrc.cn/
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LESHAN RADIO COMPANY, LTD.
L8050*LT1–1/3
General Purpose Transistors
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
25
V
Collector-Base Voltage
VCBO
40
V
Emitter-Base Voltage
VEBO
5V
Collector Current-continuoun
IC
800
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board,(1)
PD
TA=25°C
225
mW
Derate above 25°C
1.8
mW/°C
Thermal Resistance,Junction to Ambient
R
θJA
556
°C/W
Total Device Dissipation
PD
Alumina Substrate,(2) TA=25°C
300
mW
Derate above 25°C
2.4
mW/°C
Thermal Resistance,Junction to Ambient
R
θJA
417
°C/W
Junction and Storage Temperature
T j,T St g
-55 to +150
°C
L8050*LT1
1
3
2
SOT–23
1
BASE
2
EMITTER
COLLECTOR
3
FEATURE
High current capacity in compact package.
IC = 0.8A.
Epitaxial planar type.
PNP complement: L8550
Pb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
L8050PLT1
80P
L8050PLT1G
80P
(Pb-Free)
L8050QLT1
1YC
L8050QLT1G
1YC
(Pb-Free)
Shipping
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
NPN Silicon




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