L8550HQLT1 datasheet(1/3 Pages) LRC | General Purpose Transistors NPN Silicon

1 page

LESHAN RADIO COMPANY, LTD.

L8550H*LT1-1/3

General Purpose Transistors

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

Collector-Emitter Voltage

VCEO

Collector-Base Voltage

VCBO

Emitter-Base Voltage

VEBO

Collector Current-continuoun

1500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board,(1)

TA=25°C

225

Derate above 25°C

1.8

mW/°C

Thermal Resistance,Junction to Ambient

θJA

556

°C/W

Total Device Dissipation

Alumina Substrate,(2) TA=25°C

300

Derate above 25°C

2.4

mW/°C

Thermal Resistance,Junction to Ambient

θJA

417

°C/W

Junction and Storage Temperature

T j,T St g

-55 to +150

°C

L8550H*LT1

SOT–23

NPN Silicon

FEATURE

High current capacity in compact package.

IC =1.5A.

Epitaxial planar type.

NPN complement: L8050H

Pb-Free Package is available.

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

L8550HPLT1

1HB

L8550HPLT1G

1HB

(Pb-Free)

L8550HQLT1

1HD

L8550HQLT1G

1HD

(Pb-Free)

3000/Tape&Reel

Shipping

3000/Tape&Reel

Version 1.1

BASE

EMITTER

COLLECTOR

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