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L9013LT1 Datasheet(Hoja de datos) 1 Page - Leshan Radio Company

No. de Pieza. L9013LT1
Descripción  General Purpose Transistors NPN Silicon
Descarga  2 Pages
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Fabricante  LRC [Leshan Radio Company]
Página de inicio  http://www.lrc.cn/
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 1 page
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General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
20
V
Collector-Base Voltage
VCBO
40
V
Emitter-Base Voltage
VEBO
5V
Collector current-continuoun
IC
500
mAdc
THERMAL CHARATEERISTICS
Symbol
Max
Unit
Total Device Dissipation FR-5 Board, (1)
PD
225
mW
1.8
mW/oC
Thermal Resistance, Junction to Ambient
R θ JA
556
oC
/W
PD
300
mW
2.4
mW/oC
Thermal Resistance, Junction to Ambient
R θJA
417
oC
/W
Junction and Storage Temperature
Tj ,Tstg
-55 to +150
oC
DEVICE MARKING
L9013QLT1=13Q
ELECTRICAL CHARACTERISTICS (TA
=25oC unless otherwise noted)
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V(BR)CEO
20
-
-
V
(IC=1.0mA)
Emitter-Base Breakdown Voltage
V(BR)EBO
5
-
-
V
(IE=100
µA)
Collector-Base Breakdown Voltage
V(BR)CBO
40
-
-
V
(IC=100
µA)
Collector Cutoff Current (VCB=35V)
ICBO
-
-
150
nA
Emitter Cutoff Current (VEB=4V)
IEBO
150
nA
Characteristic
Total Device Dissipation
Derate above 25
oC
Rating
TA=25
oC
Derate above 25
oC
Alumina Substrate, (2) TA=25
oC
Characteristic
1
3
2
L901
3*LT1
SOT-23 (TO-236AB)
LESHAN RADIO COMPANY, LTD.
2
EMITTER
3
COLLECTOR
1
BASE
L
9013*LT1–1/2




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