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• Silicon Epitaxial Planar Diode Small-Signal Switching Diode LSD2004LT1 • Fast switching Diode; especially suited for applications requiring high voltage capability 1 3 2 SOT– 23 1 ANODE CATHODE DEVICE MARKING LSD2004LT1=DB5 MAXIMUM RATINGS AND THERMAL CHARACTERISTICS Continuous Reverse Voltage V 240 V Characteristic Symbol MIN Max Unit Reverse Breakdown Voltage V 300 V Reverse Voltage Leakage Current (I = 100uA) (V = 240V) I 100 nA (BR) R R R (V = 240V,Tj=150 ) I 100 uA R R °C Forward Voltage mV (I = 20 mA) V 870 mV F F (I = 100 mA) V 1000 mV F F Reverse Recovery Time T 50 ns rr (I =30 mA ,Irr=3.0 mA) R F Capacitance C 5.0 pF (V =V = 0,F=1MHZ) FR 3 Forward Current (continuous) IF 225 mA LESHAN RADIO COMPANY, LTD. LSD2004LT1-1/2 |
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