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● ● Fast switching dual in-series diode, Maximum Ratings and Thermal Characteristics TA = 25°C unless otherwise noted Symbol Value Unit VR 240 V VRRM 300 V IRRM 200 mA IF 225 mA IRFM 625 mA IFSM 4 A 1 Ptot 350 mW RΘJA 357 °C/W Tj 150 °C TS –65 to +150 °C LSD2004SLT1 LSD2004SLT1─1/2 Power Dissipation Typical Thermal Resistance Junction to Ambiant Air Junction Temperature Storage Temperature Range Peak Repetitive Forward Current Non-Repetitive Peak Forward Current at tp = 1µs at tp = 1s Continuous Reverse Voltage Peak Repetitive Reverse Voltage Peak Repetitive Reverse Current Forward Current (continuous) Top View voltage capability Driver Marking LSD2004SLT1 =DB6 Parameter Dual In-Series Small-Signal Switching Diode Silicon Epitaxial Planar Diode especially suited for applications requiring high |
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