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| BAT54XN3 |
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CYSTEKEC |
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CYStech Electronics Corp. Spec. No. : C302N3-H Issued Date : 2003.04.14 Revised Date : Page No. : 2/4 BAT54N3/BAT54AN3/BAT54CN3/BAT54SN3 CYStek Product Specification Absolute Maximum Ratings • Maximum Temperatures Storage Temperature Tstg ................................................................................................... -65~+150 °C Junction Temperature Tj .............................................................................................................. +125 °C • Maximum Power Dissipation Total Power Dissipation (Ta=25 °C) Ptot (Note) ......................................................................... 230 mW • Maximum Voltages and Currents (Ta=25°C) Repetitive Peak Reverse Voltage VRRM .............................................................................................. 30 V Continuous Forward Current IF ................................................................................................... 200 mA Repetitive Peak Forward Current(tp≤1s,duty cycle≤0.5)………………………………………… 300mA Non-repetitive Peak Forward Current (tp<10ms, sinusoidal) IFSM ............................................... 600 mA Note:for double diodes, Ptot is the total power dissipation of both diodes. Characteristics (Ta=25°C) Characteristic Symbol Condition Min. Max. Unit Reverse Breakdown Voltage VBR IR=100µA 30 - V VF(1) IF=0.1mA - 240 mV VF(2) IF=1mA - 320 mV VF(3) IF=10mA - 400 mV VF(4) IF=30mA - 500 mV Forward Voltage (Note 1) VF(5) IF=100mA - 800 mV Reverse Leakage Current (Note 2) IR VR=25V,Tj=25℃ - 2 µA Diode Capacitance CD VR=1V, f=1MHz - 10 pF Reverse Recovery Time trr IF=IR=10mA RL=100 Ω measured at IR=1mA - 5 ns Notes : 1.pulse test, tp=380µs,duty cycle<2%. 2.pulse test, tp=5ms,duty cycle<2%. |
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