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BTA1759N3 Datasheet(PDF) 1 Page - Cystech Electonics Corp. |
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BTA1759N3 Datasheet(HTML) 1 Page - Cystech Electonics Corp. |
1 / 4 page CYStech Electronics Corp. Spec. No. : C309N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 1/4 BTA1759N3 CYStek Product Specification High Voltage PNP Epitaxial Planar Transistor BTA1759N3 Description • High breakdown voltage. (BVCEO=-400V) • Low saturation voltage, typical VCE(sat) =-0.2V at Ic/IB =-20mA/-2mA. • Wide SOA (safe operation area). • Complementary to BTC4505N3. Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage VCEO -400 V Emitter-Base Voltage VEBO -7 V Collector Current IC -300 mA Power Dissipation Pd 225 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C BTA1759N3 SOT-23 B:Base C:Collector E:Emitter |
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