Nombre de pieza
         Descripción
BTD1857AT3

 Silicon NPN Epitaxial Planar Transistor ( 4 Page)


CYSTEKEC
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CYStech Electronics Corp.
Spec. No. : C855T3
Issued Date : 2004.12.15
Revised Date :
Page No. : 2/4
BTD1857AT3
CYStek Product Specification
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
180
-
-
V
IC=50µA, IE=0
BVCEO
160
-
-
V
IC=1mA, IB=0
BVEBO
5
-
-
V
IE=50µA, IC=0
ICBO
-
-
1
µA
VCB=160V, IE=0
IEBO
-
-
1
µA
VEB=4V, IC=0
*VCE(sat)
-
-
0.6
V
IC=1A, IB=100mA
*VBE(on)
-
-
1.5
V
VCE=5V, IC=150mA
hFE1
60
-
320
-
VCE=5V, IC=150mA
hFE2
30
-
-
-
VCE=5V, IC=500mA
fT
-
140
-
MHz
VCE=5V, IC=150mA
Cob
-
27
-
pF
VCB=10V, IE=0, f=1MHz
*Pulse Test: Pulse Width
≤380µs, Duty Cycle≤2%
Classification of hFE 1
Rank
P
Q
R
Range
82~190
120~200
180~320
1  2  3  4 



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