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CSPEMI400 Datasheet(PDF) 3 Page - California Micro Devices Corp |
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CSPEMI400 Datasheet(HTML) 3 Page - California Micro Devices Corp |
3 / 8 page © 2005 California Micro Devices Corp. All rights reserved. 09/28/05 490 N. McCarthy Blvd., Milpitas, CA 95035-5112 ● Tel: 408.263.3214 ● Fax: 408.263.7846 ● www.cmd.com 3 CSPEMI400 Specifications Note 1: TA=25°C unless otherwise specified. Note 2: ESD applied to input and output pins with respect to GND, one at a time. Note 3: Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin A1, then clamping voltage is measured at Pin C1. Note 4: Unused pins are left open Note 5: The parameters are guaranteed by design. ABSOLUTE MAXIMUM RATINGS PARAMETER RATING UNITS Storage Temperature Range -65 to +150 °C DC Power per Resistor 100 mW DC Package Power Rating 300 mW STANDARD OPERATING CONDITIONS PARAMETER RATING UNITS Operating Temperature Range -40 to +85 °C ELECTRICAL OPERATING CHARACTERISTICS1 SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS R1 Resistance of R1 80 100 120 Ω R2 Resistance of R2 38 47 56 Ω C Capacitance VIN = 2.5VDC, 1MHz, 30mV ac 16 20 24 pF VSTANDOFF Stand-off Voltage I = 10 μA6.0 V ILEAK Diode Leakage Current VBIAS = 3.3V 300 nA VSIG Signal Voltage Positive Clamp Negative Clamp ILOAD = 10mA ILOAD = -10mA 5.6 -1.5 6.8 -0.8 9.0 -0.4 V V VESD In-system ESD Withstand Voltage a) Human Body Model, MIL-STD-883, Method 3015 b) Contact Discharge per IEC 61000-4-2 Notes 2,4 and 5 ±25 ±10 kV kV VCL Clamping Voltage during ESD Discharge MIL-STD-883 (Method 3015), 8kV Positive Transients Negative Transients Notes 2,3,4 and 5 +12 -7 V V fC1 Cut-off frequency ZSOURCE = 50Ω, ZLOAD = 50Ω R = 100 Ω, C = 20pF 77 MHz fC2 Cut-off frequency ZSOURCE = 50Ω, ZLOAD = 50Ω R = 47 Ω, C = 20pF 85 MHz |
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