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NPN TRANSISTOR C945 100mA AF OUTPUT AMPLIFIER MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS SYMBOL MIN TYP MAX UNIT CONDITION Collector-Emitter Breakdown Voltage BVceo 50 V Ic=1mA Collector-Base Breakdown Voltage BVcbo 60 V Ic=5uA Emitter-Base Breakdown Voltage BVebo 5 V Ie=50μA Collector-Base Leakage Icbo 0.1 uA Vcb=60V Emitter-Base Leakage Iebo 0.1 uA Veb=5V Collector-Emitter Saturation Voltage Vce（sat） 0.18 0.3 V Ic=100mA, Ib=10mA DC Current Gain Hfe 90 200 600 Vce=6.0V,Ic=1.0mA Collector Current Ic 100 mA Current Gain Bandwidth fT 100 180 MHz Vce=6V, Ie=10mA Output Capacitance Cob 4.5 6.0 pF Vcb=10V,Ie=0,f=1MHz Power Dissipation Pc 0.25 W Junction Temperature Tj 125 ℃ Storage Temperature Tstg -55 125 ℃ Classification of Hfe Rank R Q P K Range 90-180 135-270 200-400 300-600 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 |
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