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TPC8009-H Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TPC8009-H Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 7 page TPC8009-H 2002-01-17 2 Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) 65.8 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 125 °C/W Marking (Note 5) Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 W, IAR = 13 A Note 4: Repetitive rating; pulse width limited by max channel temperature. Note 5: · on lower left of the marking indicates Pin 1. ※ shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of manufacture: January to December are denoted by letters A to L respectively.) ※ TYPE TPC8009 H (a) FR-4 25.4 ´ 25.4 ´ 0.8 (Unit: mm) (b) FR-4 25.4 ´ 25.4 ´ 0.8 (Unit: mm) |
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