Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
TPCF8101 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
|
TPCF8101 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page TPCF8101 2002-08-28 4 Ambient temperature Ta (°C) RDS (ON) – Ta Drain-source voltage VDS (V) IDR – VDS Drain-source voltage VDS (V) Capacitance – VDS Ambient temperature Ta (°C) Vth – Ta Ambient temperature Ta (°C) PD – Ta Total gate charge Qg (nC) Dynamic input/output characteristics 0 0 40 80 120 160 0.5 1.5 2 2.5 3 1 (1) t = 5 s (1) DC (2) t = 5 s (2) DC (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) 0 -80 -40 0 40 80 120 160 40 80 120 160 VGS = -1.8 V -2.5 V -4.5 V ID = -1.5, -2.5, -6 A -2.5 A -6 A ID = -2.5 A Common source Pulse test ID = -1.5 A ID = -1.5 A 10 -0.1 -1 -10 -100 100 1000 10000 VGS = 0 V f = 1 MHz Ta = 25°C Ciss Coss Crss 0 -80 -40 0 40 80 120 160 -0.5 -1.0 -1.5 -2.0 Common source VDS = -10 V ID = -200 mA Pulse test -1 0 -10 -100 0.4 0.8 1.2 1.6 2.0 Common source Ta = 25°C Pulse test VGS = 0 V -1 V -1.8 V -2.5 V -4.5 V 0 0 8 16 24 32 40 -4 -8 -12 -16 -20 0 -4 -8 -12 -16 -20 VDD = -10 V -2.5 V -5 V VGS Common source ID = -6 A Ta = 25°C Pulse test VDS |
Número de pieza similar - TPCF8101 |
|
Descripción similar - TPCF8101 |
|
|
Enlace URL |
Política de Privacidad |
ALLDATASHEET.ES |
¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |