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H3–1/2 Common Anode Silicon Dual Switching diodes MAXIMUM RATINGS (T A = 2 5°C) Rating Symbol Value Unit Reverse Voltage M1MA151WAT1 V R 40 Vdc M1MA152WAT1 80 Peak Reverse Voltage M1MA151WAT1 V RM 40 Vdc M1MA152WAT1 80 Forward Current Single I F 100 mAdc Dual 150 Peak Forward Current Single I FM 225 mAdc Dual 340 Peak Forward Surge Current Single I FSM (1) 500 mAdc Dual 750 THERMAL CHARACTERISTICS Rating Symbo lMax Unit Power Dissipation P D 200 mW Junction Temperature T J 150 °C Storage Temperature T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (T A = 25°C) Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage Current M1MA151WAT1 I R V R = 35 V — 0.1 µAdc M1MA152WAT1 V R = 75 V — 0.1 Forward Voltage V F I F = 100 mA — 1.2 Vdc Reverse Breakdown Voltage M1MA151WAT1 V R I R = 100 µA 40 — Vdc M1MA152WAT1 80 — Diode Capacitance C D V R = 0, f = 1.0 MHz — 15 pF Reverse Recovery Time t rr (2) I F = 10 mA, V R = 6.0 V, — 10 ns R L = 100 Ω, I rr = 0.1 I R 1. t = 1 SEC 2. t rr Test Circuit 2 1 CATHODE ANODE 3 These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low power surface mount applications. • Fast t rr , < 10 ns • Low C D , < 15 pF • Available in 8 mm Tape and Reel Use M1MA151/2WAT1 to order the 7 inch/3000 unit reel. Use M1MA151/2WAT3 to order the 13 inch/10,000 unit reel. 1 3 2 SC-59 PACKAGE COMMON ANODE DUAL SWITCHING DIODES 40/80 V-100mA SURFACE MOUNT M1MA151WAT1 M1MA152WAT1 CASE 318D–03, STYLE5 SC–59 |
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