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BUZ111SE3045A Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BUZ111SE3045A Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 8 page Data Sheet 1 05.99 SIPMOS ® Power Transistor Product Summary Drain source voltage 55 VDS V Drain-Source on-state resistance Ω 0.008 RDS(on) ID Continuous drain current 80 A Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175˚C operating temperature Pin 1 Pin 2 Pin 3 G D S Packaging Type Package Ordering Code BUZ111S Tube P-TO220-3-1 Q67040-S4003-A2 BUZ111S E3045A Tape and Reel Q67040-S4003-A6 P-TO263-3-2 Tube BUZ111S E3045 P-TO263-3-2 Q67040-S4003-A5 Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Unit Value Continuous drain current TC = 25 ˚C, 1) TC = 100 ˚C 80 80 ID A Pulsed drain current TC = 25 ˚C IDpulse 320 Avalanche energy, single pulse ID = 80 A, VDD = 25 V, RGS = 25 Ω mJ EAS 700 Avalanche energy, periodic limited by Tjmax 30 EAR Reverse diode d v/dt IS = 80 A, VDS = 40 V, di/dt = 200 A/µs, Tjmax = 175 ˚C d v/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC = 25 ˚C Ptot 300 W Operating and storage temperature Tj , Tstg ˚C -55... +175 55/175/56 IEC climatic category; DIN IEC 68-1 BUZ 111S |
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