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| 1PS89SS04 |
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 PHILIPS
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3 page 
1999 Jun 08 3 Philips Semiconductors Preliminary specification High-speed double diodes Note 1. Refer to SC-89 (SOT490) standard mounting conditions. ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Refer to SC-89 (SOT490) standard mounting conditions. Ptot total power dissipation (per package) Tamb ≤ 25 °C; note 1 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − +150 °C SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Per diode VF forward voltage see Fig.6 IF = 1 mA 610 − mV IF = 10 mA 740 − mV IF =50mA − 1V IF = 100 mA − 1.2 V IR reverse current see Fig.8 VR =25V − 30 nA VR =80V − 0.5 µA VR = 25 V; Tj = 150 °C − 30 µA VR = 80 V; Tj = 150 °C − 100 µA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.9 − 1.5 pF − 1.5 pF − 2pF trr reverse recovery time switched from IF = 10 mA to IR =10mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.10 − 4ns Vfr forward recovery voltage switched to IF = 10 mA; tr =20ns; see Fig.11 − 1.75 V SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-s thermal resistance from junction to soldering point both diodes loaded 55 K/W 70 K/W 70 K/W Rth j-a thermal resistance from junction to ambient note 1 500 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT |
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