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1997 May 29 4 Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current 2N2222 IE = 0; VCB =50V − 10 nA IE = 0; VCB = 50 V; Tamb = 150 °C − 10 µA ICBO collector cut-off current 2N2222A IE = 0; VCB =60V − 10 nA IE = 0; VCB = 60 V; Tamb = 150 °C − 10 µA IEBO emitter cut-off current IC = 0; VEB =3V − 10 nA hFE DC current gain IC = 0.1 mA; VCE =10V 35 − IC = 1 mA; VCE =10V 50 − IC = 10 mA; VCE =10V 75 − IC = 150 mA; VCE = 1 V; note 1 50 − IC = 150 mA; VCE = 10 V; note 1 100 300 hFE DC current gain IC = 10 mA; VCE = 10 V; Tamb = −55 °C 2N2222A 35 − hFE DC current gain IC = 500 mA; VCE = 10 V; note 1 2N2222 30 − 2N2222A 40 − VCEsat collector-emitter saturation voltage 2N2222 IC = 150 mA; IB = 15 mA; note 1 − 400 mV IC = 500 mA; IB = 50 mA; note 1 − 1.6 V VCEsat collector-emitter saturation voltage 2N2222A IC = 150 mA; IB = 15 mA; note 1 − 300 mV IC = 500 mA; IB = 50 mA; note 1 − 1V VBEsat base-emitter saturation voltage 2N2222 IC = 150 mA; IB = 15 mA; note 1 − 1.3 V IC = 500 mA; IB = 50 mA; note 1 − 2.6 V VBEsat base-emitter saturation voltage 2N2222A IC = 150 mA; IB = 15 mA; note 1 0.6 1.2 V IC = 500 mA; IB = 50 mA; note 1 − 2V Cc collector capacitance IE =ie = 0; VCB = 10 V; f = 1 MHz − 8pF Ce emitter capacitance IC =ic = 0; VEB = 500 mV; f = 1 MHz 2N2222A − 25 pF fT transition frequency IC = 20 mA; VCE = 20 V; f = 100 MHz 2N2222 250 − MHz 2N2222A 300 − MHz F noise figure IC = 200 µA; VCE =5V; RS =2kΩ; f = 1 kHz; B = 200 Hz 2N2222A − 4dB |
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