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NPN SILICON PLASTIC HIGH VOLTAGE POWER TRANSISTORS CJD3439 DPAK (TO-252) Plastic Package Designed for use in Line Operated Equipment Requiring High fT ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL UNIT Collector Emitter Voltage VCEO V Collector Base Voltage VCBO V Emitter Base Voltage VEBO V Collector Current Continuous IC A Base Current IB mA Total Power Dissipation at Tc=25ºC PD W Derate Above 25ºC W/ºC Operating and Storage Junction Temperature Range Tj, Tstg ºC THERMAL CHARACTERISTICS Junction to Case Rth (j-c) ºC/W ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector Emitter Sustaining Voltage VCEO(sus) IC=5mA, IB=0 350 V Collector Cut Off Current ICEO VCE=300V, IB=0 20 µA Collector Cut Off Current ICEX VCE=450V, VEB(off)=1.5V 500 µA Collector Cut Off Current ICBO VCB=350V, IE=0 20 µA Emitter Cut Off Current IEBO VBE=5V, IC=0 20 µA DC Current Gain hFE IC=2mA, VCE=10V 30 IC=20mA, VCE=10V 15 200 Collector Emitter Saturation Voltage VCE (sat) IC=50mA, IB=4mA 0.5 V Base Emitter Saturation Voltage VBE (sat) IC=50mA, IB=4mA 1.3 V Base Emitter On Voltage VBE (on) IC=50mA, VCE=10V 0.8 V DYNAMIC CHARACTERISTICS DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Current Gain Bandwidth Product fT IC=10mA, VCE=10V, f=5MHz 15 MHz Output Capacitance C0b VCB=10V, IE=0, f=1MHz 10 pF Small Signal Current Gain hfe IC=5mA, VCE=10V, f=1KHz 25 MARKING XY= Date Code CJD3439Rev300606E 150 VALUE 450 0.3 5.0 350 15 0.12 8.33 CDIL CJD3439 XY MX - 65 to +150 Continental Device India Limited Data Sheet Page 1 of 4 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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