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| CMBT5088 |
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Continental Device India Limited Data Sheet Page 1 of 3 NPN SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBT5088 = 1Q CMBT5089 = 1R ABSOLUTE MAXIMUM RATINGS 5088 5089 Collector–base voltage (open emitter) VCB0 max. 35 30 V Collector–emitter voltage (open base) VCE0 max. 30 25 V Collector current IC max. 50 mA Total power dissipation up to Tamb = 25 °C Ptot* max. 225 mW Junction temperature Tj max. 150 ° C Collector-emitter saturation voltage IC = 10 mA; IB = 1 mA VCEsat max. 0.5 V D.C. current gain IC = 100 µA; VCE = 5 V hFE min. 300 400 max. 900 1200 Transition frequency at f = 20 MHz IC = 500 µA; VCE = 5 V fT min. 50 MHz *FR-5 Board = 1.0 × 0.75 × 0.062 in. CMBT5088 CMBT5089 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3 2 1 SOT-23 Formed SMD Package Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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