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NPN SILICON EPITAXIAL POWER TRANSISTOR CSD1833 (9AW) TO220 MARKING : AS BELOW Low Freq. Power AMP. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 100 V Collector -Emitter Voltage VCEO 80 V Emitter Base Voltage VEBO 5 V Collector Current (DC) IC 7 A Pulse* 10 A Collector Power Dissipation Ta 25degC PC 2 W Tc=25 deg C 30 W Junction Temperature Tj 150 deg C Storage Temperature Range Tstg -55 to +150 deg C *Single Pulse Pw=100ms ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector Emitter Voltage VCEO IC=1mA, IB=0 80 - - V Collector Base Voltage VCBO IC=50uA, IE=0 100 - - V Emitter Base Voltage VEBO IE=50uA,IC=0 5 - - V Collector Cut off Current ICBO VCB=100V, IE=0 - - 10 uA ICEO VCE=80, IB=0 - - 1 uA Emitter Cut off Current IEBO VBE=4V,IC=0 - - 10 uA Collector Emitter Saturation Voltage VCE(Sat)** IC=4A,IB=0,4A - - 1 V Base Emitter Saturation Voltage VBE(Sat)** IC=4A,IB=0,4A - - 1.5 V DC Current Gain hFE** IC=1A, VCE=5V 60 - 320 Dynamic Characteristics Transition Frequency ft VCE=5V,IC=50mA, - 5 - MHz f=5MHz Collector Output Capacitance Cob VCB=10V, IE=0 - 150 - pF f=1MHz hFE CLASSIFICATION** D : 60-120; E : 100-200, F: 160-320 MARKING CSD CSD CSD 1833D 1833E 1833F **Pulse Test Continental Device India Limited Data Sheet Page 1 of 3 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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