2PA1774J datasheet(3/8 Pages) PHILIPS

No. de pieza	2PA1774J

Descripción Electrónicos	PNP general purpose transistor

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Fabricante Electrónico	PHILIPS [NXP Semiconductors]

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3 / 8 page

1999 May 04

3

Philips Semiconductors

Preliminary speciﬁcation

PNP general purpose transistor

2PA1774J

THERMAL CHARACTERISTICS

Note

1. Refer to SC-89 (SOT490) standard mounting conditions.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

Rth j-a

thermal resistance from junction to ambient

in free air; note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −30 V

−−100

nA

IE = 0; VCB = −30 V; Tj = 150 °C

−−5

µA

IEBO

emitter cut-off current

IC = 0; VEB = −4V

−−100

nA

hFE

DC current gain

IC = −1 mA; VCE = −6 V; note 1

2PA1774JQ

120

270

2PA1774JR

180

390

2PA1774JS

270

560

VCEsat

collector-emitter saturation

voltage

IC = −50 mA; IB = −5 mA; note 1

−−200

mV

Cc

collector capacitance

IE =ie = 0; VCB = −12 V; f = 1 MHz

−

2.2

pF

fT

transition frequency

IC = −2 mA; VCE = −12 V;

f = 100 MHz; note 1

100

−

MHz

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