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FM25W256-G Datasheet(PDF) 9 Page - List of Unclassifed Manufacturers

No. de pieza FM25W256-G
Descripción Electrónicos  256Kb FRAM Wide Voltage Serial Memory
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Fabricante Electrónico  ETC1 [List of Unclassifed Manufacturers]
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FM25W256
Rev. 1.0
Aug. 2004
Page 9 of 13
Electrical Specifications
Absolute Maximum Ratings
Symbol
Description
Ratings
VDD
Power Supply Voltage with respect to VSS
-1.0V to +7.0V
VIN
Voltage on any pin with respect to VSS
-1.0V to +7.0V
and VIN < VDD+1.0V
TSTG
Storage Temperature
-55
°C to + 125°C
TLEAD
Lead Temperature (Soldering, 10 seconds)
300
° C
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device.
This is a stress rating only, and the functional operation of the device at these or any other conditions
above those listed in the operational section of this specification is not implied. Exposure to absolute
maximum ratings conditions for extended periods may affect device reliability.
DC Operating Conditions (TA = -40°C to + 85°C, VDD = 2.7V to 5.5V unless otherwise specified)
Symbol
Parameter
Min
Typ
Max
Units
Notes
VDD
Power Supply Voltage
2.7
-
5.5
V
IDD
Power Supply Current
@ SCK = 1.0 MHz
@ SCK = 5.0 MHz
@ SCK = 25.0 MHz
-
-
-
0.8
1.8
7.0
mA
1
ISB
Standby Current
-
90
µA
2
ILI
Input Leakage Current
-
±1
µA
3
ILO
Output Leakage Current
-
±1
µA
3
VIH
Input High Voltage
0.7 VDD
VDD + 0.5
V
VIL
Input Low Voltage
-0.3
0.3 VDD
V
VOH
Output High Voltage
@ IOH = -2 mA
VDD – 0.8
-
V
VOL
Output Low Voltage
@ IOL = 2 mA
-
0.4
V
VHYS
Input Hysteresis
0.05 VDD
-
V
4
Notes
1.
SCK toggling between VDD-0.3V and VSS, other inputs VSS or VDD-0.3V.
2.
SCK = SI = /CS=VDD. All inputs VSS or VDD.
3.
VSS ≤ VIN ≤ VDD and VSS ≤ VOUT ≤ VDD.
4.
This parameter is characterized but not 100% tested.


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