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GS832118E-133V Datasheet(PDF) 1 Page - GSI Technology

No. de pieza GS832118E-133V
Descripción Electrónicos  2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
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Fabricante Electrónico  GSI [GSI Technology]
Página de inicio  http://www.gsitechnology.com
Logo GSI - GSI Technology

GS832118E-133V Datasheet(HTML) 1 Page - GSI Technology

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GS832118/32/36E-xxxV
2M x 18, 1M x 32, 1M x 36
36Mb Sync Burst SRAMs
1.8 V or 2.5 V VDD
1.8 V or 2.5 V I/O
Commercial Temp
Industrial Temp
Rev: 1.04 6/2006
1/31
© 2003, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Features
• IEEE 1149.1 JTAG-compatible Boundary Scan
• 1.8 V or 2.5 V core power supply
• 1.8 V or 2.5 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 165-bump FP-BGA package
• RoHS-compliant 165-bump BGA package available
Functional Description
Applications
The GS832118/32/36E-xxxV is a 37,748,736-bit high
performance synchronous SRAM with a 2-bit burst address
counter. Although of a type originally developed for Level 2
Cache applications supporting high performance CPUs, the
device now finds application in synchronous SRAM
applications, ranging from DSP main store to networking chip
set support.
Controls
Addresses, data I/Os, chip enable (E1), address burst control
inputs (ADSP, ADSC, ADV) and write control inputs (Bx,
BW, GW) are synchronous and are controlled by a positive-
edge-triggered clock input (CK). Output enable (G) and power
down control (ZZ) are asynchronous inputs. Burst cycles can
be initiated with either ADSP or ADSC inputs. In Burst mode,
subsequent burst addresses are generated internally and are
controlled by ADV. The burst address counter may be
configured to count in either linear or interleave order with the
Linear Burst Order (LBO) input. The Burst function need not
be used. New addresses can be loaded on every cycle with no
degradation of chip performance.
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by
the user via the FT mode pin (Pin 14). Holding the FT mode
pin low places the RAM in Flow Through mode, causing
output data to bypass the Data Output Register. Holding FT
high places the RAM in Pipeline mode, activating the rising-
edge-triggered Data Output Register.
SCD Pipelined Reads
The GS832118/32/36E-xxxV is a SCD (Single Cycle Deselect)
pipelined synchronous SRAM. DCD (Dual Cycle Deselect)
versions are also available. SCD SRAMs pipeline deselect
commands one stage less than read commands. SCD RAMs
begin turning off their outputs immediately after the deselect
command has been captured in the input registers.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write
control inputs.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS832118/32/36E-xxxV operates on a 1.8 V or 2.5 V
power supply. All inputs are 1.8 V or 2.5 V compatible.
Separate output power (VDDQ) pins are used to decouple
output noise from the internal circuits and are 1.8 V or 2.5 V
compatible.
Parameter Synopsis
-250 -225 -200 -166 -150 -133 Unit
Pipeline
3-1-1-1
tKQ
tCycle
3.0
4.0
3.0
4.4
3.0
5.0
3.5
6.0
3.8
6.6
4.0
7.5
ns
ns
Curr (x18)
Curr (x32/x36)
285
350
265
320
245
295
220
260
210
240
185
215
mA
mA
Flow
Through
2-1-1-1
tKQ
tCycle
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
8.5
8.5
ns
ns
Curr (x18)
Curr (x32/x36)
205
235
195
225
185
210
175
200
165
190
155
175
mA
mA


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