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H05N50 Datasheet(PDF) 1 Page - Hi-Sincerity Mocroelectronics |
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H05N50 Datasheet(HTML) 1 Page - Hi-Sincerity Mocroelectronics |
1 / 4 page HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200601 Issued Date : 2006.02.01 Revised Date : 2006.02.20 Page No. : 1/4 H05N50E, H05N50F HSMC Product Specification H05N50 Series N-CHANNEL POWER MOSFET Description This N - Channel MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. Features • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements Thermal Characteristics Symbol Parameter Value Units TO-220AB 1.71 R θ JC Thermal Resistance Junction to Case Max. TO-220FP 3.3 °C/W R θ JA Thermal Resistance Junction to Ambient Max. 62 °C/W Absolute Maximum Ratings Symbol Parameter Value Units V DSS Drain-Source Voltage 500 V I D Drain to Current (Continuous) 5 A I DM Drain to Current (Pulsed) (*1) 20 A V GS Gate-to-Source Voltage (Continue) ±30 V Total Power Dissipation TO-220AB TO-220FP 80 38 W P D Derate above 25 °C TO-220AB TO-220FP 0.59 0.3 W/ °C E AS Single Pulse Avalanche Energy (*2) 300 mJ I AR Avalanche Current (*1) 5 A E AR Repetitive Avalanche Energy (*1) 7.4 mJ d v/dt Peak Diode Recovery (*3) 5 V/ns T j Operating Temperature Range -55 to 150 °C T stg Storage Temperature Range -55 to 150 °C T L Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds 300 °C *1: Repetitive rating; pulse width limited by max. junction temperature *2: VDD=50V, starting Tj=25°C, L=24mH, RG=25Ω, IAS=4.5A *3: ISD≤4.5A, di/dt≤75A/us, VDD≤V(BR)DSS, TJ≤150°C H05N50 Series Pin Assignment 1 2 3 1 2 3 Tab 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source G D S H05N50 Series Symbol |
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