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| SIDC03D60C6 |
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 INFINEON
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SIDC03D60C6 Edited by INFINEON Technologies, AIM PMD D CID CLS, L4521M, Edition 1.1, 10.07.2006 Maximum Ratings Parameter Symbol Condition Value Unit Repetitive peak reverse voltage V RRM 600 V Continuous forward current limited by Tjmax I F 1 ) Maximum repetitive forward current limited by Tjmax I FRM 20 A Operating junction and storage temperature Tj , Tstg -40...+175 °C 1 ) depending on thermal properties of assembly Static Electrical Characteristics (tested on chip), Tj=25 °C, unless otherwise specified Value Parameter Symbol Conditions min. Typ. max. Unit Reverse leakage current I R V R=600V Tj=25 ° C 27 µA Cathode-Anode breakdown Voltage V Br I R= 0.25 mA Tj=25°C 600 V Forward voltage drop V F I F=10A Tj=25 ° C 1.25 1.6 1.95 V Dynamic Electrical Characteristics (verified by design/characterization), inductive load Peak reverse recovery current I R M IF=10A di/dt=1500A/ µs VR=300V VGE = - 15V Tj = 25 °C Tj = 125 °C Tj = 150 °C 18.0 19.0 21.0 A Recovered charge Qr IF=10A di/dt=1500A/ µs VR=300V VGE = - 15V Tj = 25 °C Tj = 125 °C Tj = 150 °C 0.50 0.85 1.10 µC Reverse recovery energy E rec IF=10A di/dt=1500A/ µs VR=300V VGE = - 15V Tj = 25 °C Tj = 125 °C Tj = 150 °C 0.11 0.20 0.26 mJ 2) values also influenced by parasitic L- and C- in measurement and package. |
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