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 INFINEON
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SIDC09D60E6 Edited by INFINEON Technologies AI PS DD CLS, L 4303M, Edition 2, 20.07.04 Maximum Ratings Parameter Symbol Condition Value Unit Repetitive peak reverse voltage V RRM 600 V Continuous forward current limited by Tjmax I F 20 Single pulse forward current (depending on wire bond configuration) I FSM tP = 10 ms sinusoidal Tj = 25°C 80 Maximum repetitive forward current limited by Tjmax I FRM 60 A Operating junction and storage temperature Tj , Tstg -55...+150 °C Static Electrical Characteristics (tested on chip), Tj=25 °C, unless otherwise specified Value Parameter Symbol Conditions min. Typ. max. Unit Reverse leakage current I R V R=600V Tj=25 ° C 27 µA Cathode-Anode breakdown Voltage V Br I R=3mA Tj=25°C 600 V Forward voltage drop V F I F=20A Tj=25 ° C - 1.25 1.7 V Dynamic Electrical Characteristics, at Tj = 25 °C, unless otherwise specified, tested at component Value Parameter Symbol Conditions min. Typ. max. Unit t rr1 Tj =25°C 150 Reverse recovery time t rr2 IF=20A di/dt=700A/ µs VR=400V Tj =125°C 200 ns I RRM1 Tj =25°C 20 Peak recovery current I RRM2 IF=20A di/dt=900A/ µs VR= 300V Tj =125°C 25 A Qrr1 Tj=25 ° C 1.7 Reverse recovery charge Qrr2 IF=20A di/dt=900A/ µs VR= 300V Tj=125 ° C 2.7 µC |
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